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7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz

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7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz

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Brand Name : INNOTION

Model Number : YP601238T

Place of Origin : Jiangsu, China

Price : Prices are negotiable

Delivery Time : 2-10days

Packaging Details : Carton

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INNOTION 7W 28V Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz

Product Description
Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 7200MHz. The transistor is supplied in a plastic SOT-89 package.

Technical Specifications

Package SOT-89
Output Power 7W
operating Frequency DC ~7.2GHz
Votage 28V

Features
High Efficiency and Linear Gain Operation
Negative Gate Voltage and Bias Sequencing Required
Excellent Thermal Stability and Excellent Ruggedness
Metal Based Package Sealed with Ceramic-Epoxy Lid
Gold Metallization System: Chip-Wire Bond-Package
Company Information

Suzhou Industrial Park. Founded in 2010. The only official shop! We sell our own products at the best price, such as WiFi amplifier, VCO, sweep signal source, wireless card group and other product lines;
Professional people do professional things. We have mastered some core technologies in the product field and have a number of independent intellectual property rights.
Our products have been sold to many domestic cities, but also very popular with many foreign customers, such as Russia, the United States, South Korea, Vietnam, Sweden and so on.

We stand by our commitment to ensure first class customer service.

Our Services

We stand by our commitment to ensure first class customer service.


Quality 7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz for sale

7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz Images

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